Gallium-Arsenide (GaAs) Wafer
Zn-doped for semiconductor applications. Diameter: 50.8mm, Thickness 500?m (0,5mm) – One side optically polished one side fine ground. Comes with original wafer tray.
Compounds, Ga, Other
Gallium-Arsenide (GaAs) Wafer Si doped – 2” (50.8mm) Dia.
€ 59,90 incl. VAT
Nicht vorrätig
| Element | As, Ga |
|---|
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