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Atomic no.:
Atom. weight: 28.0855
Density: 2.33
semi metal
Melting point: 1410°C
Boiling point: 2355°C
Colour: blue grey shiny
Discoverer: J.J. Berzelius
Place: Stockholm, Sweden
Year: 1824

Silicon was discovered in 1824 by J.J. Berzelius in Stockholm, Sweden. After carbon, silcon is the most abundant element on earth, the abundance being 277,000 ppm. It is generally present as a silicate, these being found in many rocks, clays and soils. Silicon is obtained by reducing silica (sand, SiO2), with carbon. Further purification of the element for applications requiring high purity material (e.g. semi conductor devices) is achieved by zone refining, the resulting purity being better than 1:109. Silicon exists in two allotropic forms; brown silicon is a powder, whereas crystalline (metallic) silicon is grey and it is the latter which is more widely used. Bulk silicon is unreactive towards oxygen, water, acids (excluding HF), but is soluble in hot alkalis. Silicon has many applications in various industries; for example, ultra high purity silicon is used in the semiconductor industry as a result of its semiconducting properties. Silicon is also used as an alloying element in the manufacture of certain alloys (e.g. ferrosilicon, an alloy of iron and silicon which is used to introduce silicon into steel and cast iron). It is also used in the manufacture of glass.

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 o-SiP single crystal orthorhombic Silicon phosphide  Art. Nr. 004951  
o-SiP single crystal orthorhombic Silicon phosphide
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o-SiP single crystal orthorhombic Silicon phosphide

Properties: Copper-shining, red translucent crystal platelets. Air stable, stable in conc. non-oxidizing acids. Melting point ~ 1110–1130 °C 

Orthorhombic SiP (o-SiP) is a 2D layered crystal and may have a significant impact on optoelectronic technologies.

Differentialscanning calorimetry (DSC) and thermogravimetric
analysis (TGA) curves show that o-SiP is thermally stable even
at a temperature of 1045 °C. This is very important for device
fabrication and practical applications. Unlike graphene, o-SiP
has an appropriate band gap that is determined to be 1.7 eV.
Bulk o-SiP is a p-type semiconductor with a carrier mobility
of 2.034 × 103 cm2 V−1 s−1, which is tenfold that of MoS2. The
photoresponse properties of o-SiP were investigated by excitation
using a 671 nm laser with different powers of 20, 40, 60,
80, 100 and 120 mW, respectively. Its appropriate band gap
and high enough carrier mobility, together with clear photoswitching
behavior and relatively fast response, make it possible
for o-SiP to be a 2D electronic and optoelectronic


(a) The building units of [Si2P6], (b) pentagons and hexagons
formed from o-SiP building blocks, (c) [SiP] single layer and (d) [SiP]
two-dimensional framework.

Amount: 1 St. / 1 pc.
Purity : 99.99%
Packing: ampoule

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Availability: 1 in stock

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